Purpose: PNPN Thyristor KU118G-9 designed for hilf-wave AC control application, high volume consumer applications such as reley and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Package for Surface Mounting . Sensitive Gate Glass Passivated Junction for Reliability and Uniformity. · VDRM = 400V · ITRMS = 0,2A · IGT < 200µA VA-characteristic X - 150V/div Y- 0,2mA/div VA-characteristic Symbol SOT-23 1-C,   2-A,    3-G

Maximum Rating (T=25°C)

Parameter Symbol Rating Unit Test condition Peak Repetitive Forward Voltage VDRM 400 V TJ=-40°C to +125°C, RGK =1000 Ohms Repetitive Peak Reverse Voltage VRRM 5 V TJ=-40°C to 125°C On-State Current ITRMS 0,2 A All Condition Angles, TC=40°C Peak Reverse Gate Voltage VGRM 5,0 - IGR=10mA Peak Gate Current IGM 1 A 10 ms max Peak Gate Dissipation PGM 2 W 10 ms max Operating Temperature TJ -40 to +125 °C - Storage Temperature TSTG -40 to +150 °C -

Thermal Characteristics

Characteristic Symbol Max Unit  Thermal Resistance, Junction to Ambient RJA 600 °C/W  Thermal Resistance, Junction to Case RJC 260 °C/W

Electrical Characteristics (T=25°C)

Characteristic Symbol Min Max Unit Test Condition Off State Leakage Current IDRM   100 m A VD=VDRM, RGK=1000 Ohms, TJ=125°C Off State Leakage Current IDRM   10 m A VD=VDRM, RGK=1000 Ohms, TJ=25°C On State Voltage VT   1,93 V IT=0,5A, TJ=25°C Gate Trigger Current IGT   200 m A VD=6V, RL=100 Ohms Gate Trigger Voltage VGT   0,8 V VD=6V, RL=100 Ohms Holding Current IH   5 mA RGK=1000 Ohms