|
 |
Semiconductor Devices |
 |
|
|

 |
Single,
Dual and Half-Bridge Diodes
|
 |
|
 |
Single Diode
SD106*-9 |
Dual Diodes with
Common Catode
DDC106-9 |
Dual Diodes with Common Anode
DDA106-9 |
Half Bridge Diodes
BD106-9 |
Case SOT-23 |
 |
 |
 |
 |
 |
1- A
2-K
3- |
1-A1 2-K
3-A2 |
1-K1 2-A
3-K2 |
1-A1 2-K1-A2
3-K2 |
|
|
|
|
 |
|
|
Maximum Rating
|
 |
Rating |
Symbol |
Value |
Unit |
Repetitive Peak Reverse Voltage |
VRRM |
400 |
V |
Forward Current
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9 |
IF |
150
150
200 |
mA |
Repetitive Peak Forward Current
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9 |
IFRM |
300
300
1000 |
mA |
Surge non Repetitive Forward Current |
IFSM |
2 |
A |
Power Dissipation |
PD |
225 |
mW |
Storage and Junction Temperature Range |
TSTG
TJ |
-55 to 125
150 |
°C
°C |
|
|
 |
|
|
Thermal Characteristics
|
 |
Characteristic |
Symbol |
Value |
Unit |
Thermal Resistance - Junction to Ambient |
RJA |
600 |
°C/W |
Thermal Resistance - Junction to Caset |
RJC |
260 |
°C/W |
|
|
 |
|
|
Electrical Characteristics
|
 |
Characteristic |
Symbol |
Min |
Max |
Unit |
Forward Voltage
SD106A-9 (IF=150mA)
DDC106-9, DDA106-9, BD106-9 (IF=150mA)
SD106B-9 (IF=200mA) |
VF |
1,2
1,2
1,0 |
1,6
1,6
1,4 |
V |
Reverse Current (VR= 400V)
TA=+25°C
TA=+100°C |
IR |
- |
1
10 |
µA |
Capacitance (VR=0)
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9 |
C |
- |
1
1
5 |
pF |
|
|
 |
|
|
* Before order the complementary parameters must
defined more precisely.
|


|