PNPN   Thyristor KU118 designed for high volume consumer applications such as reley and lamp drivers, smll motor controls, gate drivers for larger thyristors, and sensing and detection circuits.  VDRM=100-600V ITRMS=0,8A IGT=200µA   Sensitive  Gate Glass Passivated Junction for Reliability and Uniformity. VA-characteristic X - 150V/div Y - 0,2mA/div

Chip Case TO-92 Chematic Symbol         1- C, 2- G, 3-A   C     G      A

Maximum Ratings (T_J=25°C unless otherwise noted)

Rating Symbol Value Unit Peak Repetitive Forward Voltage (TJ=25 to 125°C RGK=1000 Ohms) KU118-1 KU118-2 KU118-3 KU118-4 KU118-6     100 200 300 400 600 V Peak Repetitive Reverse Voltage (TJ=25 to 125°C, RGK=1000 Ohms) VRRM 6 V Forward Current RMS ITRMS 0,8 A Peak Gate Current - Forward, TA=25°C IGFM 1 A Peak Reverse Gate Voltage  VGRM 5 V Operating Junction Temperature Range TJ -40 to125 °C

Thermal Characteristics

Characteristics Symbol Value Unit Termal Resistance, Junction toCase RJC 80 °C/W Termal Resistance, Junction to Ambient RJA 200 °C/W

Electrical Characteristics* (T=25°C)

Parameter Symbol Min Typ Max Unit Peak Forward Blocking Current (VAK=VDRM, RGK= 1000 Ohms) IDRM     10 µA Forward "On" Voltage (ITM=1,2A) VTM     1,93 V Gate Trigger Current (V=7V, RL=100 Ohms) IGT     200 µA Gate Trigger Voltage (V=7V, RL=100 Ohms) VGT     0,8 V Holding Current (V=7V) IH     5 mA