VKE=400Â IK=0,5À h21E>100 ft=100MHz   Transistor with using Diffusion Areas for improving High-Voltage Operation, High-Amplification Factor and High Frequency.   E    B    C                Case   TO-92

Maximum Ratings (T_J=25°C unless otherwise noted)

Ratings Symbol Value Unit Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VBEO 6 V Collector Current IC 0,5 A Collector Dissipation PD 0,8 W Junction Temperature TJ +125 °C Storage Temperature TSTG -40 to +150 °C

Electrical Characteristics* (T=25°C)

Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC=0,1mA, IE=0) BVCBO 500 - - V Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) BVCEO 400 - - V Emitter-Base Breakdown-Voltage (IE=0,1mA IC=0) BVEBO 6 - - V Collector Cutoff Current (VCB= 400V) ICBO - - 100 nA Emitter Cutoff Current (VEB=6V) IEBO - - 100 nA DC Current Gain (VCE=10V, IC= 50mA) hFE1 100 - - - DC Current Gain (VCE=10V, IC= 100mA) hFE2 40 - - - Collector-Emitter  Saturation Voltage (IC= 50mA, IB= 6mA) VCE{SAT} - - 0,3 V Emitter-Base Sanuration Voltage (IC= 50mA, IB = 6mA) VBE{SAT} - 0,8 - V Output Capacitance (VCB=10V, IE=0, f=1MHz) COB - 7 - pF Current Gain-Bandwidth Product (VCE=10V, IC= 10 mA) ft 100 - - MHz