Thyristors K106, K108, K106-5, K108-5

Thyristors K106, K108, K106-5, K108-5 were designed for half -wave AC power control applications, such as motor power control devices, or wherever half-wave silicon gate-controlled devices are needed. High performance high-voltage thyristors with unilateral mesa design. Glass passivated junction for reliability. Constructive variants: K106*, K108* in case TO-220; K106*-5, K108*-5 unpackaged (chip) for application in the hybrid circuits. VDRM  ,VRRM=400-600V ITRMS=5A IGT=3mA(K108) IGT=20mA(K106) VTM=1,5V

Symbol Case TO-220      C    A     G Chip 3,2 õ 3,2 õ 0,3 mm C           G A 2,7 x 2,7 õ0,3 mm

Maximum Ratings (T_J=25°C unless otherwise noted)

Rating Symbol Value Unit Peak Repetitive Forward  and Revers Voltage (TJ=-40 to 125°C) K106A, K108A K106B, K108B VDRM VRRM 400 600 V Peak Gate Voltadg - Reverse K108 VGRM 6 V Forward Current RMS IT(RMS) 5 A Peak Non-repetitive Surge Current (One Half Cycle, 50Hz, TJ=125oC) ITSM 50 A Peak Gate Current - Forward IGM 2 A Operating Junction Temperature Range TJ -40 to125 °C

Electrical   Characteristics* (T=25°C, R_GK=1000 Ohms unless otherwise noted)

Parameter Symbol Min Typ Max Unit Peak Forward and Reverse Blocking Current (VAK=VDRM or VRRM, RGK= 1000 Ohms) T=25°C T=125°C IDRM         10 500 µA Forward "On" Voltage (ITM=8A) VTM     1,5 V Gate Trigger Current (V=7V, RL=5 Ohms) K106 K108 IGT     20 3 mA Gate Trigger Voltage (VA=7V, RL=5 Ohms) VGT     0,8 V Holding Current (V=7V) K106 K108 IH       30 10 mA Critical Rate of Rise of Off Voltage (VD=VDRM, Exponentian Waveform, TJ=125°C) dV/dt 200     V/µs