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Semiconductor Devices |
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TRIAC's K107, K107-5 |
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TRIAC's K107, K107-5 are designed for high performance full-wave AC control applications, such as light dimmers, motor speed controls, heating controls; or wherever full-wave silicon gate controlled solid-state devices are needed.
High Performance High-voltage Triac with a Unilateral Mesa Design.
Glass Passivated Junction for Reliability and Greater Parameter Uniformity.
Constructive variants: K107* in ñase TO-220; K107*-5 unpackaged (chip) for application in the hybrid circuits.
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Maximum Ratings (TJ=25°C
unless otherwise noted)
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Rating |
Symbol |
Value |
Unit |
Peak Repetitive Off-State Voltage
(-40 to 125îC, Sine Wave, 50Hz, Gate Open )
K107A, K107A-5
K107B, K107B-5 |
VDRM
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400
600
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V |
On-State RMS Current
(50Hz, TC=100îC) |
ITRMS |
8
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A |
Peak Non-repititive Surge Current
(One Full Cycle, 50Hz, TC=100îC) |
ITSM |
50
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A |
Operating Junction Temperature Range |
TJ |
-40 to 125îC |
îÑ |
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Electrical Characteristics
(T=25°C; RGK=1000 Ohms unless otherwise noted)
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Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Peak Repetitive Blocking Current
(VAK=VDRM, Gate
Open)
T=25°C
T=125°C |
IDRM
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50
500
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µA |
Peak On-State Voltage
(ITM=11A) |
VTM |
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1,75
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1,95
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V |
Gate Trigger Current
(VD=7V, RL=5
Ohms)
A2(+), G(+)
A2(+), G(-)
A2(-), G(-)
A2(-), G(+) |
IGT |
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30
30
30
40
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mA |
Holding Current
(VD=7V, Gate Open) |
Ióä
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40
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mA |
Critical Rate of Rise of Off Voltage
(VD=VDRM, Exponentian Waveform, TJ=125°C) |
dV/dt
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100
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V/µs
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* Before order the complementary parameters must
defined more precisely.
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