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Semiconductor Devices

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TRIAC's K107, K107-5


Semiconductor Devices



TRIAC's K107, K107-5 are designed for high performance full-wave AC control applications, such as light dimmers, motor speed controls, heating controls; or wherever full-wave silicon gate controlled solid-state devices are needed.

High Performance High-voltage Triac with a Unilateral Mesa Design. Glass Passivated Junction for Reliability and Greater Parameter Uniformity.

Constructive variants: K107* in ñase TO-220; K107*-5 unpackaged (chip) for application in the hybrid circuits.


Symbol

schtriaceng.gif (420 bytes)
Case TO-220

to220v.gif (3743 bytes)

A1  A2   G

Chip

 Anode1 (Pb-Sn)        Gate (Pb-Sn)

i17n.gif (4663 bytes)

Anode2 (Sn-Bi)


Maximum Ratings (TJ=25°C unless otherwise noted) 


Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage
(-40 to 125î
C, Sine Wave, 50Hz, Gate Open )
K107A, K107A-5
K107B, K107B-5

VDRM

 



400
600

V

On-State RMS Current
(50Hz, TC=100î
C)

ITRMS


8

A

Peak Non-repititive Surge Current
(One Full Cycle, 50Hz, TC=100î
C)

ITSM


50

A

Operating Junction Temperature Range

TJ

-40 to 125îC

îÑ




Electrical   Characteristics (T=25°C; RGK=1000 Ohms unless otherwise noted)


Parameter

Symbol

Min

Typ

Max

Unit

Peak Repetitive Blocking Current
(VAK=VDRM, Gate Open)

T=25°C
T=125°C

IDRM

 

 

 




50
500

µA

Peak On-State Voltage
(ITM=11A)

VTM

 


1,75


1,95

V

Gate Trigger Current
(VD=7V, RL=5 Ohms)
A2(+), G(+)
A2(+), G(-)
A2(-), G(-)
A2(-), G(+)

IGT

 

 



30
30
30
40

mA

Holding Current
(VD=7V, Gate Open)

Ióä

 

 


40

mA

Critical Rate of Rise of Off Voltage
(VD=VDRM, Exponentian Waveform, TJ=125°C)

dV/dt



100

 

 

V/µs



* Before order the complementary parameters must defined more precisely.

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