Polydex. Semiconductor Devices. Thyristors Modules. Functional Blocks.

Semiconductor Devices

Silicon Bidirectional Switches (SBS) KU503

Purpose:

Silicon Bidirectional Switches (SBS) KU503 can be applied in phase power regulators, thyristor actuators, inverters, threshold devices, working at alternating voltage, and other control devices.

The device provides reliable start-up of all types triacs.

...The device is produced in different constructive variants: in package SOT23, TO-92 and in impackaged chip variant with aluminum or soldering pads for surface mounting in hybrid circuits, as well as other variants.

VA-characteristic
SBS KU503A
X - 2V/div
Y - 0,1mA/div

Constructive Variants SBS

Symbol Chip Case SOT-23 Case TO-92

1-A1, 2-G, 3-A2

to92new.gif (4667 bytes)

1 2 3

1-G, 2-A1, 3-A2

Maximum Ratings (T_J=25°C unless otherwise noted)

Ratings

Symbol

Value

Unit

DC Forward Current
I_F

200

mA

Repetitive Peak Forward Current
(1% Duti Cycle, 10ms Pulse Width, T_A=100°C)
I_FM

2

A

DC Gate Current
I_G

5

mA

Operating Junction Temperature Range
T_J

- 55+125

°C

Power Dissipation
KU503, KU503-5
KU503-9

P_D
500
250 mW

Thermal Characteristics

Characteristic
Symbol Max Unit

Thermal Resistance, Junction to Ambient
KU503
KU503-9 R_JA
200
600 °C/W

Thermal Resistance, Junction to Case
KU503
KU503-9 R_JC 100
260 °C/W

Electrical Characteristics* (T=25°C)

Parameter

Symbol

Min

Typ

Max

Unit

Switching Voltage
KU503A

KU503B

KU503C

V_S

6

12

18

7,5

14

21

9

16

24

V

Switching Current
I_S
30 50 100
µA

Switching Voltage Differential
|V_S1-V_S2|
-
0,3
0,5
V

Forward On-State Voltage
(I_F=200mA)
V_F
- -
1,7
V

Off State Blocking Current
I_B
- -
1

µA

* Before order the complementary parameters must defined more precisely.

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