*GAT - Gate Associated Transistor

VCE >  400V IC=2A h21E>20 fT=50MHz   High Speed Switching NPN Transistor (GAT)  with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Circuit. Transistor uses diffusion areas for improving High Voltage Operation, High Amplification Factor and High Frequency. E  C   B

Maximum Rating

Rating Simbol Value Unit Collector-Emitter Sustaining Voltage VCE0 400 V Collector-Base Breakdown Voltage VCB0 700 V Collector- Emitter Breakdown Voltage VCES 700 V Emitter Base Voltage VEB0 6 V Collector Current IC 2 A Operating Temperature TJ 150 оC

Electrical Characteristics (T_C=25^oC)

Rating Simbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IK=100mA, L=25mH) VCE0(sus)   400 - - V Collector-Base Breakdown Voltage VCB0(sus) 700 - - V Emitter Base Voltage (IEB0=1mA) VEB0 6 - - V Collector Cutoff Current (VCE=VCE0, IB=0) ICE0 - - 50 µA Emitter-Base Saturation Voltage  (IK=1A, IB=0,2A) VEB(sat) - 0,8 - V  Collector-Emitter  Saturation Voltage  (IK= 1A, IB=0,2A) - - 0,3 - V DC Current Gain ( VCE=1V, IK=0,4A) ( VCE=1V, IK=1,0A) hFE 20 10 - - - Output Capacitance  (VCB=10V, IE=0, f=1MHz) Cob - 50 - pF Current Gain Bandwidth ( VCE=10V, IC=0,5A, f=1MHz) fT 50 - - MHz

DIODE CHARACTERISTICS (T=25^oC)

Rating Simbol Min Typ Max Unit Forward Diode1 Voltage   (IEC=1A) VEC - 1,0 - V Forward Diod 2 Voltage  (IBK=0,02A) VBK - 0,65 - V