PNPN Chip-thyristor MH55-MH100 designed for half-wave AC control application, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

SILICON WAFERS TECHNICAL CHARACTERISTICS

Characteristic Chip MH55 MH75 MH100 Size of chip, mm 0.55 x 0.55 0,75 x 0,75 1,0 x 1,0 Plating of working side Al Plating of back side (anode) Ti-Ni-Au Thickness of chip, mm 0.270 ± 0.02 Wafer die, mm 76 Passivation SiO2

ABSOLUTE MAXIMUM RATINGS (Tc=25°C)

Parameter  Symbol  MH55 MH75 MH100 Unit Peak Repetitive Forward Voltage TJ=-40°C to 125°C, RGK =1kOhms VDRM 400 400-600 400-600 V Repetitive Peak Reverse Voltage TJ=-40°C to 125°C VRRM 5 V On-State Current * All Condition Angles TC=40°C ITRMS 0,6 0,8 1,0 A Operating Junction Temperature Range - - 65  >¸ +125 °C

* Case TO-92

Characteristic Symbol Min Max Unit Test Condition Off State Leakage Current IDRM - 10  µA VDRM, RGK=1k, TJ=25°C On State Voltage MH55 MH75 MH100 VT - 1.93 1,93 1,93 V IT=0.6A, TJ=25°C IT=0.8A, TJ=25°C IT=1.0A, TJ=25°C Gate Trigger Current  IGT - 100 µA VD=6V Holding Current IH - 5 mA VDRM=6V,  RGK=1kOhms, TJ=25°C

* Before order the complementary parameters must defined more precisely.