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Silicon Bidirectional Switches (SBS) KU503


Semiconductor Devices



Purpose:

Silicon Bidirectional Switches (SBS) KU503 can be applied in phase power regulators, thyristor actuators, inverters, threshold devices, working at alternating voltage, and other control devices.

The device provides reliable start-up of all types triacs.

...The device is produced in different constructive variants: in package SOT23, TO-92 and in impackaged chip variant with aluminum or soldering pads for surface mounting in hybrid circuits, as well as other variants.


VA-characteristic
SBS KU503A
X - 2V/div
Y - 0,1mA/div

va503n.gif (9391 bytes)




Constructive Variants SBS

Symbol Chip Case SOT-23 Case TO-92

 

1-A1, 2-G, 3-A2

to92new.gif (4667 bytes)

1   2   3                 

1-G, 2-A1, 3-A2


Maximum Ratings (TJ=25°C unless otherwise noted)

Ratings

Symbol

Value

Unit

DC Forward Current

IF

200

mA

Repetitive Peak Forward Current
(1% Duti Cycle, 10ms Pulse Width, TA=100°C)

IFM


2

A

DC Gate Current

IG

5

mA

Operating Junction Temperature Range

TJ

- 55+125

°C

Power Dissipation

KU503, KU503-5
KU503-9

PD

500
250
mW



Thermal  Characteristics

Characteristic

Symbol Max Unit
 Thermal Resistance, Junction to Ambient
KU503
KU503-9
RJA
200
600
°C/W
 Thermal Resistance, Junction to Case
KU503
KU503-9 
RJC 100
260
°C/W



Electrical Characteristics* (T=25°C)

Parameter

Symbol

Min

Typ

Max

Unit

Switching Voltage

KU503A

KU503B

KU503C

VS

 

6

12

18

 

7,5

14

21

 

9

16

24

V

Switching Current

IS

30 50 100

µA

Switching Voltage Differential

|VS1-VS2|

-

0,3

0,5

V

Forward On-State Voltage
(IF=200mA)

VF

- -
1,7

V

Off State Blocking Current

IB

- -

1

µA





* Before order the complementary parameters must defined more precisely.

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