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Silicon Unidirectional Switches (SUS) with Reverse conductivity

Semiconductor Devices



Application:

Silicon Unidirectional Switches (SUS) with Reverse conductivity KU120, KU120-5, KU120-9 can be applied in phase power regulators, thyristor actuators, inverters, threshold devices, working at alternating voltage, and other control devices.

The device provides reliable start-up of all types thyristors.

The device is produced in different constructive variants: in package SOT23, TO-92 and in unpackaged chip variant with aluminum or soldering pads for surface mounting in hybrid circuits, as well as other variants.


VA-characteristic
KU120A
X- 2V/div
Y- 0,1mA/div
va120n.gif (10263 bytes)



Constructive Variants SUS

Symbol Case SOT-23
KU120-9 		Case TO-92
KU120		 Chip
KU120-5
sch120eng.gif (1408 bytes)   sot23new.gif (4971 bytes)

KU120-9
1- A,  2- G,  3- C

 to92new.gif (4667 bytes)

KU120
1- G,  2- C,  3- A

 120-121chip.gif (3271 bytes)

KU120-5

Maximum Ratings (TJ=25°C unless otherwise noted)

Ratings

Symbol

Value

Unit
DC Forward Current

IF

200

mA
DC Reverse Current

IR

10

mA
Repetitive Peak Forward Current
(1% Duti Cycle, 10ms Pulse Width,
TA=100°C)

IFM

 

2

A
DC Gate Current

IG

5

mA
Operating Junction Temperature Range

TJ

- 55 to +125

оC
Power Dissipation

KU120, KU120-5

KU120-9

PD

 500

250

 mW



Thermal Characteristics

Characteristic

 Symbol Max Unit
 Thermal Resistance, Junction to Ambient
KU120,
KU120-9 		RJA
200
600		 °C/W
 Thermal Resistance, Junction to Case
KU120,
KU120-9  		RJC 100
260		 °C/W



Electrical Characteristics* (T=25°C)

Parameter

Symbol

Min

Typ

Max

Unit
Switching Voltage

KU120A

KU120B

KU120C

VS

  

6

12

18

  

7,5

14

21

  

9

16

24

V
Switching Current

IS

 30 50 100

µA
Forward On-State Voltage
(IF=200mA)

VF

 - -
1,7

V
Reverse Voltage (IFR=10mA)

VR

 - - 2,4

V
Off State Blocking Current

IB

 - -

1

µA




Before order the complementary parameters must defined more precisely.

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